MOSFET N-CH 60V 9A 8SO Product overview: SI4470EY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4470EY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 9A 8SO
Manufacturer: Vishay
Win Source Part Number: 1095958-SI4470EY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.85W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 70nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 9A 8SO
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4470EY-T1-GE3 | SI4470EY-T1-GE3 | 1095958-SI4470EY-T1-GE3 | SI4470EY-T1-GE3 |
| Product Name | 60V 9A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4470EY-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1850 milliwatts | 1850 milliwatts | 1850 milliwatts | |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |
| Package Type | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
