Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4470EY-T1-GE3

MOSFET N-CH 60V 9A 8SO

Manufacturer: Vishay
Win Source Part Number: 1095958-SI4470EY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.85W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 70nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

MOSFET N-CH 60V 9A 8SO Product overview: SI4470EY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4470EY-T1-GE3 can be used for catalog matching and distributor lookup.