P-CH MOSFET, -8V, 20A, 9mR Rds On, SOIC Product overview: SI4465ADY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -8V, 20A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -8V, 20A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4465ADY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028498-SI4465ADY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 8V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 85nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
P-Channel 8V 13.7A (Ta), 20A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
P-Channel 8V 13.7A (Ta), 20A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
P-Channel 8V 13.7A (Ta), 20A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
MOSFET, P-CH, 8V, 13.7A, 150DEG C, 6.5W; TRANSISTOR POLARITY:P CHANNEL; DRAIN SOURCE VOLTAGE VDS:8V; CONTINUOUS DRAIN CURRENT ID:13.7A; ON RESISTANCE RDS(ON):0.0075OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:4.5VROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
P CHANNEL MOSFET, -8V, 13.7A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:13.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Power Dissipation:3W; Product Range:- RoHS Compliant: Yes
MOSFET, P-CH, 8V, 13.7A, 150DEG C, 6.5W; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:13.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:450mV RoHS Compliant: Yes
MOSFET P-CH 8V 8SOIC
MOSFET P-CH 8V 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4465ADY-T1-E3 | 028498-SI4465ADY-T1-E3 | SI4465ADY-T1-E3TR-ND | 22252254 | 75M5472 | 97W2655 | SI4465ADY-T1-E3 | SI4465ADY-T1-E3 |
| Product Name | -8V 20A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4465ADY-T1-E3 | Single FETs, MOSFETs | Transistor | P Channel Mosfet, -8V, 13.7A, Soic, Full Reel; Channel Type Vishay | Mosfet, P-Ch, 8V, 13.7A, 150Deg C, 6.5W; Channel Type Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 6500 milliwatts | 3000 to 6500 milliwatts | 3000 milliwatts | 3000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 8 volts | 8 volts |
