Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4448DY-T1-E3

N-Channel 12V 50A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

MOSFET N-CH 12V 50A 8SO Product overview: SI4448DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4448DY-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 712131-SI4448DY-T1-E3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Part Status: Obsolete(EOL)
Family Name: Si4448DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-SO
Channel Type Type: N
Drain Source Voltage: 12V
Vgs(th) (Maximum) @ Id: 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 12350pF @ 6V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 3.5W (Ta), 7.8W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.7 mOhm @ 20A, 4.5V
Alternative Parts (Cross-Reference): Si4838BDY-T1-GE3;
Introduction Date: January 08, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: End of life (Obsolete)
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited