P-Channel Power MOSFET, 40V, 3.3A, 54mR, SOIC Product overview: SI4447DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 40V, 3.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 3.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4447DY-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SOIC
P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SOIC
P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 111314-SI4447DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 3.3A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 805pF @ 20V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 72 mOhm @ 4.5A, 15V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
P CH MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V; Power Dissipation:1.1W RoHS Compliant: Yes
P CH MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET P-CH 40V 3.3A 8SO
MOSFET P-CH 40V 3.3A 8SO
MOSFET 40V 4.5A 2.0W 54mohm @ 10V
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4447DY-T1-GE3 | SI4447DY-T1-GE3CT-ND | 111314-SI4447DY-T1-GE3 | 84R8052 | 15R5021 | SI4447DY-T1-GE3 | SI4447DY-T1-GE3 | SI4447DY-T1-GE3 |
| Product Name | P-Channel 40V 3.3A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4447DY-T1-GE3 | P Ch Mosfet; Channel Type Vishay | P Ch Mosfet, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | ||||
| PD | 1100 milliwatts | 1100 milliwatts | 1100 milliwatts | 1100 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
