MOSFET P-CH 30V 12.7/18.3A 8SOIC
Trans MOSFET P-CH 30V 18.3A 8-Pin SOIC N T/R Product overview: SI4425FDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 18.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4425FDY-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 894544-SI4425FDY-T1-
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 30 V 12.7A (Ta), 18.3A (Tc) 2.3W (Ta), 4.8W (Tc) Surface Mount 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI4425
Categories: Discrete Semiconductor Products
Case / Package: 8-SOIC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI4425FDY-T1-GE3TR, SI4425FDY-T1-GE3CT, SI4425FDY-T1-GE3DKR
P-Channel 30V 12.7A (Ta), 18.3A (Tc) 2.3W (Ta), 4.8W (Tc) Surface Mount 8-SOIC
P-Channel 30V 12.7A (Ta), 18.3A (Tc) 2.3W (Ta), 4.8W (Tc) Surface Mount 8-SOIC
P-Channel 30V 12.7A (Ta), 18.3A (Tc) 2.3W (Ta), 4.8W (Tc) Surface Mount 8-SOIC
MOSFET P-CH 30V 12.7/18.3A 8SOIC
MOSFET P-Channel 30 V (D-S) MOSFET
MOSFET, P-CH, -30V, -18.3A, 4.8W ROHS COMPLIANT: YES
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4425FDY-T1-GE3 | 278-SI4425FDY-T1-GE3 | 894544-SI4425FDY-T1-GE3 | SI4425FDY-T1-GE3TR-ND | SI4425FDY-T1-GE3 | SI4425FDY-T1-GE3 | 38AH5934 |
| Product Name | Single FETs, MOSFETs | 30V 18.3A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4425FDY-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -30V, -18.3A, 4.8W Rohs Compliant Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 12700 milliamps | ||||||
| PD | 2300 milliwatts | 2300 milliwatts |