Vishay Intertechnology, Inc. FETs - Single - SI4418DY-T1-GE3 SI4418DY-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 716190-SI4418DY-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 1.5W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 2.3A Rds On (Maximum) at Id, Vgs: 130mOhm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V Gate Source Voltage (Maximum): ±20V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 716190-SI4418DY-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 1.5W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 2.3A Rds On (Maximum) at Id, Vgs: 130mOhm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V Gate Source Voltage (Maximum): ±20V
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FETs - Single - SI4418DY-T1-GE3 - 716190-SI4418DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI4418DY-T1-GE3
716190-SI4418DY-T1-GE3
FETs - Single - SI4418DY-T1-GE3 716190-SI4418DY-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 716190-SI4418DY-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 1.5W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 2.3A Rds On (Maximum) at Id, Vgs: 130mOhm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V Gate Source Voltage (Maximum): ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 716190-SI4418DY-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 1.5W
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 2.3A
Rds On (Maximum) at Id, Vgs: 130mOhm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V
Gate Source Voltage (Maximum): ±20V

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Singapore
200V 3.0A 2.5W MOSFET Transistor
278-SI4418DY-T1-GE3
200V 3.0A 2.5W MOSFET Transistor 278-SI4418DY-T1-GE3
MOSFET 200V 3.0A 2.5W 130mohm @ 10V Product overview: SI4418DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 3.0A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3.0A, 2.5W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4418DY-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET 200V 3.0A 2.5W 130mohm @ 10V Product overview: SI4418DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 3.0A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3.0A, 2.5W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4418DY-T1-GE3 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 716190-SI4418DY-T1-GE3 278-SI4418DY-T1-GE3
Product Name FETs - Single - SI4418DY-T1-GE3 200V 3.0A 2.5W MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 1500 milliwatts 1500 milliwatts
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