Vishay Intertechnology, Inc. FETs - Single - SI4418DY-T1-GE3 SI4418DY-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 716190-SI4418DY-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 1.5W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 2.3A Rds On (Maximum) at Id, Vgs: 130mOhm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V Gate Source Voltage (Maximum): ±20V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 716190-SI4418DY-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 1.5W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 2.3A Rds On (Maximum) at Id, Vgs: 130mOhm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V Gate Source Voltage (Maximum): ±20V
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FETs - Single - SI4418DY-T1-GE3 - 716190-SI4418DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI4418DY-T1-GE3
716190-SI4418DY-T1-GE3
FETs - Single - SI4418DY-T1-GE3 716190-SI4418DY-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 716190-SI4418DY-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 1.5W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 2.3A Rds On (Maximum) at Id, Vgs: 130mOhm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V Gate Source Voltage (Maximum): ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 716190-SI4418DY-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 1.5W
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 2.3A
Rds On (Maximum) at Id, Vgs: 130mOhm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V
Gate Source Voltage (Maximum): ±20V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 716190-SI4418DY-T1-GE3
Product Name FETs - Single - SI4418DY-T1-GE3
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 1500 milliwatts
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