Vishay Intertechnology, Inc. 200V 3.0A 2.5W MOSFET Transistor SI4418DY-T1-GE3

MOSFET 200V 3.0A 2.5W 130mohm @ 10V Product overview: SI4418DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 3.0A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3.0A, 2.5W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4418DY-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 716190-SI4418DY-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 1.5W
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 2.3A
Rds On (Maximum) at Id, Vgs: 130mOhm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V
Gate Source Voltage (Maximum): ±20V