MOSFET P-CH 40V 9.9A/14A 8SO
Manufacturer: Vishay
Win Source Part Number: 894534-SI4401FDY-T1-
Series: TrenchFET® Gen III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 40 V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI4401
Categories: Discrete Semiconductor Products
Case / Package: 8-SO
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI4401FDY-GE3, SI4401FDY-T1-GE3CT, SI4401FDY-T1-GE3TR, SI4401FDY-T1-GE3DKR
Trans MOSFET P-CH 40V 9.9A 8-Pin SOIC N T/R Product overview: SI4401FDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 9.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 9.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4401FDY-T1-GE3
P-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
P-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
P-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
MOSFET P-CH 40V 9.9A/14A 8SO
MOSFET, P-CH, 40V, 14A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V; Qualification:-RoHS Compliant: Yes
P-CHANNEL 40-V (D-S) MOSFET
40V 14.2mΩ@10A,10V 2.3V@250uA P Channel SOIC-8 MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4401FDY-T1-GE3 | 894534-SI4401FDY-T1-GE3 | 278-SI4401FDY-T1-GE3 | SI4401FDY-T1-GE3CT-ND | SI4401FDY-T1-GE3 | 56AC6586 | 26AK9922 | SI4401FDY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401FDY-T1-GE3 | 40V 9.9A SOIC MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 40V, 14A, Soic; Channel Type Vishay | P-Channel 40-V (D-S) Mosfet Vishay | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | |||||
| IDSS | 9900 milliamps | 14000 milliamps | ||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts |
