Trans MOSFET P-CH 40V 9.9A 8-Pin SOIC N T/R Product overview: SI4401FDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 9.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 9.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4401FDY-T1-GE3
MOSFET P-CH 40V 9.9A/14A 8SO
P-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
P-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
P-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
Manufacturer: Vishay
Win Source Part Number: 894534-SI4401FDY-T1-
Series: TrenchFET® Gen III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 40 V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI4401
Categories: Discrete Semiconductor Products
Case / Package: 8-SO
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI4401FDY-GE3, SI4401FDY-T1-GE3CT, SI4401FDY-T1-GE3TR, SI4401FDY-T1-GE3DKR
MOSFET P-CH 40V 9.9A/14A 8SO
40V 14.2mΩ@10A,10V 2.3V@250uA P Channel SOIC-8 MOSFETs ROHS
MOSFET, P-CH, 40V, 14A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V; Qualification:-RoHS Compliant: Yes
P-CHANNEL 40-V (D-S) MOSFET
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4401FDY-T1-GE3 | SI4401FDY-T1-GE3 | SI4401FDY-T1-GE3CT-ND | 894534-SI4401FDY-T1-GE3 | SI4401FDY-T1-GE3 | SI4401FDY-T1-GE3 | 56AC6586 | 26AK9922 |
| Product Name | 40V 9.9A SOIC MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401FDY-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, P-Ch, 40V, 14A, Soic; Channel Type Vishay | P-Channel 40-V (D-S) Mosfet Vishay |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | |||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | Tape and Reel | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 |
