MOSFET P-CH 40V 8.7A 8SO
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 126197-SI4401BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8.7A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 55nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 10.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
MOSFET P-CH 40V 8.7A 8SO
40V 8.7A 1.5W 14mΩ@10V,10.5A 3V@250uA P Channel SOIC-8 MOSFETs ROHS
P CHANNEL MOSFET, -40V, 8.7A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
P CHANNEL MOSFET, -40V, 8.7A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.85W RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4401BDY-T1-E3 | SI4401BDY-T1-E3CT-ND | 126197-SI4401BDY-T1-E3 | SI4401BDY-T1-E3 | SI4401BDY-T1-E3 | SI4401BDY-T1-E3 | 57J5666 | 71T8048 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401BDY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | P Channel Mosfet, -40V, 8.7A, Soic-8; Channel Type Vishay | P Channel Mosfet, -40V, 8.7A, Soic-8, Full Reel; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | |||||
| IDSS | 8700 milliamps | 8700 milliamps | 8700 milliamps | |||||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 1850 milliwatts |
