MOSFET N-CH 30V 30A 8SO
N-Channel JFET, 30V, 3.2mR Rds(on), 30A ID, SO Package Product overview: SI4164DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4164DY-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 30A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 30V 30A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 30V 30A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028456-SI4164DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3545pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 15A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
MOSFET Transistor, N Channel, 30 A, 30 V, 0.0026 ohm, 10 V, 2.5 V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 30A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 30A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET N-CH 30V 30A 8SO
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4164DY-T1-GE3 | 278-SI4164DY-T1-GE3 | SI4164DY-T1-GE3CT-ND | 028456-SI4164DY-T1-GE3 | SI4164DY-T1-GE3 | 97W2646 | 16P3728 | SI4164DY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 30V 30A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4164DY-T1-GE3 | MOSFET | Mosfet Transistor, N Channel, 30 A, 30 V, 0.0026 Ohm, 10 V, 2.5 V Rohs Compliant Vishay | N Channel Mosfet, 30V, 30A, Soic, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| IDSS | 30000 milliamps | 30000 milliamps |
