Vishay Precision Group Single FETs, MOSFETs SI4103DY-T1-GE3

Description
P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO
Request a Quote Datasheet
Description
P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4103DY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4103DY-T1-GE3CT-ND
Single FETs, MOSFETs SI4103DY-T1-GE3CT-ND
P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - SI4103DY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4103DY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4103DY-T1-GE3DKR-ND
P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - SI4103DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4103DY-T1-GE3TR-ND
Single FETs, MOSFETs SI4103DY-T1-GE3TR-ND
P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4103DY-T1-GE3 - 894507-SI4103DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4103DY-T1-GE3
894507-SI4103DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4103DY-T1-GE3 894507-SI4103DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 894507-SI4103DY-T1-G E3 Series: TrenchFET® Gen III Operating Temperature Range: -55°C ~ 150°C (TJ) Features: P-Channel 30 V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO Package: 8-SOIC (0.154", 3.90mm Width) Package: Reel - TR Mounting: Surface Mount Family Name: SI4103 Categories: Discrete Semiconductor Products Case / Package: 8-SO ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SI4103DY-T1-GE3CT, SI4103DY-GE3, SI4103DY-T1-GE3TR, SI4103DY-T1-GE3DKR

Manufacturer: Vishay
Win Source Part Number: 894507-SI4103DY-T1-GE3
Series: TrenchFET® Gen III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 30 V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI4103
Categories: Discrete Semiconductor Products
Case / Package: 8-SO
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI4103DY-T1-GE3CT, SI4103DY-GE3, SI4103DY-T1-GE3TR, SI4103DY-T1-GE3DKR

Buy Now Datasheet
Singapore
30V 14A SOIC MOSFET Transistor
278-SI4103DY-T1-GE3
30V 14A SOIC MOSFET Transistor 278-SI4103DY-T1-GE3
Trans MOSFET P-CH 30V 14A 8-Pin SOIC N T/R Product overview: SI4103DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4103DY-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH 30V 14A 8-Pin SOIC N T/R Product overview: SI4103DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4103DY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4103DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4103DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4103DY-T1-GE3
MOSFET P-CH 30V 14A/16A 8SO

MOSFET P-CH 30V 14A/16A 8SO

Supplier's Site
Mosfet, P-Ch, -30V, -16A, Soic; Transistor Polarity Vishay - 56AC6585 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -16A, Soic; Transistor Polarity Vishay
56AC6585
Mosfet, P-Ch, -30V, -16A, Soic; Transistor Polarity Vishay 56AC6585
MOSFET, P-CH, -30V, -16A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes

MOSFET, P-CH, -30V, -16A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4103DY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4103DY-T1-GE3
Single FETs, MOSFETs SI4103DY-T1-GE3
MOSFET P-CH 30V 14A/16A 8SO

MOSFET P-CH 30V 14A/16A 8SO

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4103DY-T1-GE3CT-ND 894507-SI4103DY-T1-GE3 278-SI4103DY-T1-GE3 SI4103DY-T1-GE3 56AC6585 SI4103DY-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4103DY-T1-GE3 30V 14A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -30V, -16A, Soic; Transistor Polarity Vishay Single FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO Tape and Reel 8-SOIC (0.154, 3.90mm Width) TO-3 8-SOIC (0.154", 3.90mm Width)
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts 30 volts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.5 GHz, 100 Watt, 28 Volt GaN RF Power Transistor - TGF2929-FS - Qorvo
Specs
Transistor Technology / Material DC - 3.5 GHz, 100 Watt, 28 Volt GaN RF Power Transistor
Package Type NI-360
Power Gain 14 dB
View Details