Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4102DY-T1-GE3 SI4102DY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 103676-SI4102DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc)
Family Name: Si4102DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 370pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 158 mOhm @ 2.7A, 10V
Alternative Parts (Cross-Reference): FDS3612; RJK1028DSP-00-J5; TPCP8003-H(5LFND,F; TPCP8003-H(5LSOY,F;
Introduction Date: October 16, 2007
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

MOSFET N-CH 100V 3.8A 8SO Product overview: SI4102DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4102DY-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 100V 3.8A (Tc) 2.4W (Ta), 4.8W (Tc) Surface Mount 8-SOIC