Vishay Intertechnology, Inc. 20V 1.8A MOSFET Transistor SI3911DV-T1-E3

Description
MOSFET 2P-CH 20V 1.8A 6TSOP Product overview: SI3911DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3911DV-T1-E3 can be used for catalog matching and distributor lookup.
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Description
MOSFET 2P-CH 20V 1.8A 6TSOP Product overview: SI3911DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3911DV-T1-E3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
20V 1.8A MOSFET Transistor
289-SI3911DV-T1-E3
20V 1.8A MOSFET Transistor 289-SI3911DV-T1-E3
MOSFET 2P-CH 20V 1.8A 6TSOP Product overview: SI3911DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3911DV-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 20V 1.8A 6TSOP Product overview: SI3911DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3911DV-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3911DV-T1-E3 - 095212-SI3911DV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3911DV-T1-E3
095212-SI3911DV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3911DV-T1-E3 095212-SI3911DV-T1-E3
Manufacturer: Vishay Win Source Part Number: 095212-SI3911DV-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.8A Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 7.5nC @ 4.5V Maximum Rds On at Id,Vgs: 145 mOhm @ 2.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 095212-SI3911DV-T1-E3
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.8A
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 145 mOhm @ 2.2A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3911DV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3911DV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3911DV-T1-E3
MOSFET 2P-CH 20V 1.8A 6TSOP

MOSFET 2P-CH 20V 1.8A 6TSOP

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 289-SI3911DV-T1-E3 095212-SI3911DV-T1-E3 SI3911DV-T1-E3
Product Name 20V 1.8A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3911DV-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Cut Tape (CT) SOT3; 6-TSOP
Packing Method Cut Tape (CT) Tape Reel; Cut Reel Cut Tape (CT),Digi-ReelR
Polarity P-Channel
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