Manufacturer: Vishay
Win Source Part Number: 095212-SI3911DV-T1-E
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.8A
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 145 mOhm @ 2.2A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
MOSFET 2P-CH 20V 1.8A 6TSOP
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 095212-SI3911DV-T1-E3 | SI3911DV-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3911DV-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | |
| V(BR)DSS | 20 volts | |
| PD | 830 milliwatts |
