MOSFET P-CH 20V 3.9A 6TSOP Product overview: SI3867DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3867DV-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 128955-SI3867DV-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.9A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 51 mOhm @ 5.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
MOSFET P-CH 20V 3.9A 6TSOP
P-Channel 20V 3.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
MOSFET P-CH 20V 3.9A 6TSOP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-SI3867DV-T1-E3 | 128955-SI3867DV-T1-E3 | SI3867DV-T1-E3 | SI3867DV-T1-E3TR-ND | SI3867DV-T1-E3 |
| Product Name | 20V 3.9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3867DV-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1100 milliwatts | 1100 milliwatts | 1100 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | SOT3; SOT23; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
