Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3483CDV-T1-E3 SI3483CDV-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 211630-SI3483CDV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TA) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 6.1A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3483CDV-T1-E3 - 211630-SI3483CDV-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SI3483CDV-T1-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - SI3483CDV-T1-E3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SI3483CDV-T1-E3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SI3483CDV-T1-E3CT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3483CDV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet,p Ch,30V,8A,tsop-6; Transistor Polarity Vishay - 61AC1933 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 211630-SI3483CDV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TA) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 6.1A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3483CDV-T1-E3 - 211630-SI3483CDV-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3483CDV-T1-E3
211630-SI3483CDV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3483CDV-T1-E3 211630-SI3483CDV-T1-E3
Manufacturer: Vishay Win Source Part Number: 211630-SI3483CDV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TA) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 6.1A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 211630-SI3483CDV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TA)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI3483CDV-T1-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3483CDV-T1-E3
Single FETs, MOSFETs SI3483CDV-T1-E3
MOSFET P-CH 30V 8A 6TSOP

MOSFET P-CH 30V 8A 6TSOP

Supplier's Site Datasheet
Single FETs, MOSFETs - SI3483CDV-T1-E3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3483CDV-T1-E3TR-ND
Single FETs, MOSFETs SI3483CDV-T1-E3TR-ND
P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3483CDV-T1-E3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3483CDV-T1-E3DKR-ND
Single FETs, MOSFETs SI3483CDV-T1-E3DKR-ND
P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3483CDV-T1-E3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3483CDV-T1-E3CT-ND
Single FETs, MOSFETs SI3483CDV-T1-E3CT-ND
P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3483CDV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3483CDV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3483CDV-T1-E3
MOSFET P-CH 30V 8A 6TSOP

MOSFET P-CH 30V 8A 6TSOP

Supplier's Site
Mosfet,p Ch,30V,8A,tsop-6; Transistor Polarity Vishay - 61AC1933 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet,p Ch,30V,8A,tsop-6; Transistor Polarity Vishay
61AC1933
Mosfet,p Ch,30V,8A,tsop-6; Transistor Polarity Vishay 61AC1933
MOSFET,P CH,30V,8A,TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation RoHS Compliant: Yes

MOSFET,P CH,30V,8A,TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 211630-SI3483CDV-T1-E3 SI3483CDV-T1-E3 SI3483CDV-T1-E3TR-ND SI3483CDV-T1-E3 61AC1933
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3483CDV-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet,p Ch,30V,8A,tsop-6; Transistor Polarity Vishay
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts 30 volts
PD 2000 to 4200 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3
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