TRANSISTOR 6100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal Product overview: SI3483CDV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 6100 mA, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6100 mA, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3483CDV-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
MOSFET P-CH 30V 8A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 211630-SI3483CDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TA)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
MOSFET,P CH,30V,8A,TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation RoHS Compliant: Yes
MOSFET P-CH 30V 8A 6TSOP
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI3483CDV-T1-E3 | SI3483CDV-T1-E3TR-ND | SI3483CDV-T1-E3 | 211630-SI3483CDV-T1-E3 | 61AC1933 | SI3483CDV-T1-E3 |
| Product Name | P-Channel 6100 mA 30 V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3483CDV-T1-E3 | Mosfet,p Ch,30V,8A,tsop-6; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 8000 milliamps | -8000 milliamps |
