Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3481DV-T1-E3 SI3481DV-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 108503-SI3481DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.14W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 48 mOhm @ 5.3A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 108503-SI3481DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.14W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 48 mOhm @ 5.3A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3481DV-T1-E3 - 108503-SI3481DV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3481DV-T1-E3
108503-SI3481DV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3481DV-T1-E3 108503-SI3481DV-T1-E3
Manufacturer: Vishay Win Source Part Number: 108503-SI3481DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.14W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 48 mOhm @ 5.3A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 108503-SI3481DV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.14W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 48 mOhm @ 5.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI3481DV-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3481DV-T1-E3TR-ND
Single FETs, MOSFETs SI3481DV-T1-E3TR-ND
P-Channel 30V 4A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

P-Channel 30V 4A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3481DV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3481DV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3481DV-T1-E3
MOSFET P-CH 30V 4A 6TSOP

MOSFET P-CH 30V 4A 6TSOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 108503-SI3481DV-T1-E3 SI3481DV-T1-E3TR-ND SI3481DV-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3481DV-T1-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 1140 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS209 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 3000 MHz
View Details
 - AUIRFR540ZTRL - Rochester Electronics
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type PG-TO252-3
Packing Method Tape Reel; Tape & Reel
View Details
6 suppliers