Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3456DDV-T1-GE3 SI3456DDV-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028430-SI3456DDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Family Name: Si3456DDV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.3A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 325pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): DMG6402LVT-7; DMG6402LVT-13; RTQ035N03FRATR; Introduction Date: January 00, 1900 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028430-SI3456DDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Family Name: Si3456DDV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.3A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 325pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): DMG6402LVT-7; DMG6402LVT-13; RTQ035N03FRATR; Introduction Date: January 00, 1900 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3456DDV-T1-GE3 - 028430-SI3456DDV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3456DDV-T1-GE3
028430-SI3456DDV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3456DDV-T1-GE3 028430-SI3456DDV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028430-SI3456DDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Family Name: Si3456DDV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.3A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 325pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): DMG6402LVT-7; DMG6402LVT-13; RTQ035N03FRATR; Introduction Date: January 00, 1900 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 028430-SI3456DDV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Family Name: Si3456DDV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 325pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): DMG6402LVT-7; DMG6402LVT-13; RTQ035N03FRATR;
Introduction Date: January 00, 1900
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SI3456DDV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3456DDV-T1-GE3CT-ND
Single FETs, MOSFETs SI3456DDV-T1-GE3CT-ND
N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3456DDV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3456DDV-T1-GE3DKR-ND
Single FETs, MOSFETs SI3456DDV-T1-GE3DKR-ND
N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3456DDV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3456DDV-T1-GE3TR-ND
Single FETs, MOSFETs SI3456DDV-T1-GE3TR-ND
N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Singapore
SMD 30V 6.3A MOSFET Transistor
278-SI3456DDV-T1-GE3
SMD 30V 6.3A MOSFET Transistor 278-SI3456DDV-T1-GE3
N-CH JFET 30V 6.3A 40mR TSOP Surface Mount Product overview: SI3456DDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 6.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 6.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3456DDV-T1-GE3 can be used for catalog matching and distributor lookup.

N-CH JFET 30V 6.3A 40mR TSOP Surface Mount Product overview: SI3456DDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 6.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 6.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3456DDV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 30V Vds 20V Vgs TSOP-6

MOSFET 30V Vds 20V Vgs TSOP-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3456DDV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3456DDV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3456DDV-T1-GE3
MOSFET N-CH 30V 6.3A 6TSOP

MOSFET N-CH 30V 6.3A 6TSOP

Supplier's Site
Mosfet,n Channel,30V,6.3A,tsop6; Channel Type Vishay - 87W5912 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,30V,6.3A,tsop6; Channel Type Vishay
87W5912
Mosfet,n Channel,30V,6.3A,tsop6; Channel Type Vishay 87W5912
MOSFET,N CHANNEL,30V,6.3A,TSO P6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

MOSFET,N CHANNEL,30V,6.3A,TSOP6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

Supplier's Site
Mosfet,n Ch,30V,6.3A,tsop6; Transistor Polarity Vishay - 90R9126 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Ch,30V,6.3A,tsop6; Transistor Polarity Vishay
90R9126
Mosfet,n Ch,30V,6.3A,tsop6; Transistor Polarity Vishay 90R9126
MOSFET,N CH,30V,6.3A,TSOP6; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):33mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor RoHS Compliant: Yes

MOSFET,N CH,30V,6.3A,TSOP6; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):33mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet,n Ch,30V,6.3A,tsop6, Full Reel; Channel Type Vishay - 15R4943 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Ch,30V,6.3A,tsop6, Full Reel; Channel Type Vishay
15R4943
Mosfet,n Ch,30V,6.3A,tsop6, Full Reel; Channel Type Vishay 15R4943
MOSFET,N CH,30V,6.3A,TSOP6, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

MOSFET,N CH,30V,6.3A,TSOP6, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - SI3456DDV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3456DDV-T1-GE3
Single FETs, MOSFETs SI3456DDV-T1-GE3
MOSFET N-CH 30V 6.3A 6TSOP

MOSFET N-CH 30V 6.3A 6TSOP

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028430-SI3456DDV-T1-GE3 SI3456DDV-T1-GE3CT-ND 278-SI3456DDV-T1-GE3 SI3456DDV-T1-GE3 SI3456DDV-T1-GE3 87W5912 90R9126 15R4943 SI3456DDV-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3456DDV-T1-GE3 Single FETs, MOSFETs SMD 30V 6.3A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet,n Channel,30V,6.3A,tsop6; Channel Type Vishay Mosfet,n Ch,30V,6.3A,tsop6; Transistor Polarity Vishay Mosfet,n Ch,30V,6.3A,tsop6, Full Reel; Channel Type Vishay Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 1700 to 2700 milliwatts 1700 milliwatts 1700 milliwatts 1700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 TO-3 TO-3 SOT23; SOT-23-6 Thin, TSOT-23-6
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N4403RP - 854968-2N4403RP - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor - QPD1022 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type QFN
Power Gain 24 dB
View Details
2 suppliers
GaAs Fet Switches - KS202 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details