Vishay Intertechnology, Inc. Discrete Semiconductor Products SI3446DV-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 189803-SI3446DV-T1-E 3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Manufacturer Device Package: 6-TSOP FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250μA Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 640pF @ 10V Power - Max: 3.2W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 189803-SI3446DV-T1-E 3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Manufacturer Device Package: 6-TSOP FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250μA Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 640pF @ 10V Power - Max: 3.2W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Suppliers

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Discrete Semiconductor Products - 189803-SI3446DV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
189803-SI3446DV-T1-E3
Discrete Semiconductor Products 189803-SI3446DV-T1-E3
Manufacturer: Vishay Win Source Part Number: 189803-SI3446DV-T1-E 3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Manufacturer Device Package: 6-TSOP FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250μA Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 640pF @ 10V Power - Max: 3.2W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 189803-SI3446DV-T1-E3
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SOT-23-6 Thin, TSOT-23-6
Manufacturer Device Package: 6-TSOP
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250μA
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) @ Vds: 640pF @ 10V
Power - Max: 3.2W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
20V 5.3A 2W MOSFET Transistor
278-SI3446DV-T1-E3
20V 5.3A 2W MOSFET Transistor 278-SI3446DV-T1-E3
MOSFET 20V 5.3A 2W Product overview: SI3446DV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.3A, 2W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.3A, 2W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3446DV-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 20V 5.3A 2W Product overview: SI3446DV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.3A, 2W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.3A, 2W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3446DV-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 189803-SI3446DV-T1-E3 278-SI3446DV-T1-E3
Product Name Discrete Semiconductor Products 20V 5.3A 2W MOSFET Transistor
Polarity N-Channel N-Channel
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