Manufacturer: Vishay
Win Source Part Number: 028426-SI3443CDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.97A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 12.4nC @ 5V
Max Input Capacitance: 610pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 60 mOhm @ 4.7A, 4.5V
Alternative Parts (Cross-Reference): IRLMS6802TRPBF; RTQ040P02; RTQ040P02TR; SI3443CDV-T1-GE3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Portable Devices
P-CH JFET, -20V, 4.7A, 60mR, TSOP, Small Signal Product overview: SI3443CDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, 4.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 4.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3443CDV-T1-GE3
P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
MOSFET P-CH 20V 5.97A 6TSOP
MOSFET -20V Vds 12V Vgs TSOP-6
MOSFET, P CHANNEL, 20V, 5.97A, TSOP6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.97A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes
P-CHANNEL 20-V (D-S) MOSFET
MOSFET P-CH 20V 5.97A 6TSOP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028426-SI3443CDV-T1-GE3 | 278-SI3443CDV-T1-GE3 | SI3443CDV-T1-GE3TR-ND | SI3443CDV-T1-GE3 | SI3443CDV-T1-GE3 | 55R1913 | 15R4932 | 26AK9919 | SI3443CDV-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3443CDV-T1-GE3 | -20V 4.7A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, P Channel, 20V, 5.97A, Tsop6; Channel Type Vishay | P Channel Mosfet, Full Reel; Channel Type Vishay | P-Channel 20-V (D-S) Mosfet Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| PD | 2000 to 3200 milliwatts | 3200 milliwatts | 2000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
