Manufacturer: Vishay
Win Source Part Number: 1095825-SI3437DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 1.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 510pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 750 mOhm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
MOSFET P-CH 150V 1.4A 6TSOP
P-Channel 150V 1.4A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
P-Channel 150V 1.4A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
P-Channel 150V 1.4A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
MOSFET, P CHANNEL, -150V, -1.4A, TSOP-6; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
P CHANNEL MOSFET, -150V, 1.4A, TSOP, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:3.2W RoHS Compliant: Yes
MOSFET -150V Vds 20V Vgs TSOP-6
MOSFET P-CH 150V 1.4A 6TSOP
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1095825-SI3437DV-T1-E3 | SI3437DV-T1-E3 | SI3437DV-T1-E3CT-ND | 09X6425 | 75M5448 | SI3437DV-T1-E3 | SI3437DV-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3437DV-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P Channel, -150V, -1.4A, Tsop-6; Channel Type Vishay | P Channel Mosfet, -150V, 1.4A, Tsop, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 150 volts | 150 volts | |||||
| PD | 2000 to 3200 milliwatts | 2000 milliwatts | 3200 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
