Vishay Intertechnology, Inc. 30V 4.6A MOSFET Transistor SI3434DV-T1-GE3

Description
MOSFET N-CH 30V 4.6A 6TSOP Product overview: SI3434DV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3434DV-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 30V 4.6A 6TSOP Product overview: SI3434DV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3434DV-T1-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
30V 4.6A MOSFET Transistor
278-SI3434DV-T1-GE3
30V 4.6A MOSFET Transistor 278-SI3434DV-T1-GE3
MOSFET N-CH 30V 4.6A 6TSOP Product overview: SI3434DV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3434DV-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 4.6A 6TSOP Product overview: SI3434DV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3434DV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3434DV-T1-GE3 - 211626-SI3434DV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3434DV-T1-GE3
211626-SI3434DV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3434DV-T1-GE3 211626-SI3434DV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 211626-SI3434DV-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.14W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 600mV @ 1mA (Min) Max Gate Charge: 12nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 34 mOhm @ 6.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 211626-SI3434DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.14W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.6A (Ta)
Gate-Source Threshold Voltage: 600mV @ 1mA (Min)
Max Gate Charge: 12nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 34 mOhm @ 6.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3434DV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3434DV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3434DV-T1-GE3
MOSFET N-CH 30V 4.6A 6TSOP

MOSFET N-CH 30V 4.6A 6TSOP

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-SI3434DV-T1-GE3 211626-SI3434DV-T1-GE3 SI3434DV-T1-GE3
Product Name 30V 4.6A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3434DV-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 1140 milliwatts 1140 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6
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