Vishay Intertechnology, Inc. Single FETs, MOSFETs SI2399BDS-T1-GE3

P-Channel 20 V MOSFET in SOT-23 (TO-236) package, designed for load switches, DC/DC converters, and power management applications. The device has a maximum drain-source voltage of -20 V, continuous drain current of -6.5 A at 25°C, and on-state resistance of 0.028 Ω at -10 V gate-source voltage. It features a gate-source threshold voltage range of -0.6 V to -1.5 V, total gate charge of 7.0 nC, and operates from -55°C to +150°C junction temperature. The package is lead-free and halogen-free, and the device meets RoHS compliance.