P-CH MOSFET -12V 4.1A 32mR SOT-23-3 Product overview: SI2333DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -12V, 4.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, 4.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2333DS-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1095747-SI2333DS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1100pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 5.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 12V 4.1A SOT23-3
P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:750mW RoHS Compliant: Yes
MOSFET P-CH 12V 4.1A SOT23-3
MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2333DS-T1-GE3 | 1095747-SI2333DS-T1-GE3 | SI2333DS-T1-GE3 | SI2333DS-T1-GE3DKR-ND | 84R8032 | SI2333DS-T1-GE3 | SI2333DS-T1-GE3 |
| Product Name | -12V 4.1A SOT-23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2333DS-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | P Channel Mosfet; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 12 volts | 12 volts |
