P-CH MOSFET, 20V, 3.7A, 39mR RdsOn, SOT-23-3 Product overview: SI2323DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.7A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.7A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2323DS-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 3.7A SOT23-3
P-Channel 20V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay
Win Source Part Number: 028388-SI2323DS-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Family Name: Si2323DS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 1020pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 39 mOhm @ 4.7A, 4.5V
Alternative Parts (Cross-Reference): TSM2323CX RF; TSM2311CX RF; TSM2323CX; TSM2305CX RFG;
Introduction Date: October 03, 2002
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial
P CHANNEL MOSFET, -20V, 4.7A TO-236; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 4.7A TO-236, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.25W RoHS Compliant: Yes
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.031Ohm;ID -3.7A;TO-236 (SOT-23);PD 0.75W
20V 3.7A 39mΩ@4.5V,4.7A 750mW 1V@250uA P Channel SOT-23 MOSFETs ROHS
MOSFET P-CH 20V 3.7A SOT23-3
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI2323DS-T1-E3 | SI2323DS-T1-E3 | SI2323DS-T1-E3DKR-ND | 028388-SI2323DS-T1-E3 | 06J7584 | 71T8045 | SI2323DS-T1-E3 | 70026097 | SI2323DS-T1-E3 | SI2323DS-T1-E3 |
| Product Name | 20V 3.7A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2323DS-T1-E3 | P Channel Mosfet, -20V, 4.7A To-236; Channel Type Vishay | P Channel Mosfet, -20V, 4.7A To-236, Full Reel; Channel Type Vishay | MOSFET | MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.031Ohm;ID -3.7A;TO-236 (SOT-23);PD 0.75W | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 1250 milliwatts | 750 milliwatts | 750 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 20 volts | 20 volts | -20 volts | 20 volts |
