Vishay Precision Group Single FETs, MOSFETs SI2319DS-T1-GE3

Description
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet
Description
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2319DS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2319DS-T1-GE3TR-ND
Single FETs, MOSFETs SI2319DS-T1-GE3TR-ND
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2319DS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2319DS-T1-GE3CT-ND
Single FETs, MOSFETs SI2319DS-T1-GE3CT-ND
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2319DS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2319DS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2319DS-T1-GE3DKR-ND
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Singapore
40V 2.3A SOT-23 MOSFET Transistor
278-SI2319DS-T1-GE3
40V 2.3A SOT-23 MOSFET Transistor 278-SI2319DS-T1-GE3
P-CH MOSFET, 40V, 2.3A, SOT-23, Small Signal Product overview: SI2319DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 2.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 2.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2319DS-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET, 40V, 2.3A, SOT-23, Small Signal Product overview: SI2319DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 2.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 2.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2319DS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-GE3 - 064394-SI2319DS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-GE3
064394-SI2319DS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-GE3 064394-SI2319DS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064394-SI2319DS-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 2.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 470pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 82 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 064394-SI2319DS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 470pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 82 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI2319DS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2319DS-T1-GE3
Single FETs, MOSFETs SI2319DS-T1-GE3
MOSFET P-CH 40V 2.3A SOT23-3

MOSFET P-CH 40V 2.3A SOT23-3

Supplier's Site Datasheet
P Channel Mosfet; Channel Type Vishay - 84R8030 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet; Channel Type Vishay
84R8030
P Channel Mosfet; Channel Type Vishay 84R8030
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:750mW RoHS Compliant: Yes

P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:750mW RoHS Compliant: Yes

Supplier's Site
P Channel Mosfet, Full Reel; Channel Type Vishay - 15R4910 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, Full Reel; Channel Type Vishay
15R4910
P Channel Mosfet, Full Reel; Channel Type Vishay 15R4910
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; No. of Pins:3PinsRoHS Compliant: Yes

P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; No. of Pins:3PinsRoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 40V 3.0A 1.25W 82mohm @ 10V

MOSFET 40V 3.0A 1.25W 82mohm @ 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2319DS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2319DS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2319DS-T1-GE3
MOSFET P-CH 40V 2.3A SOT23-3

MOSFET P-CH 40V 2.3A SOT23-3

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2319DS-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI2319DS-T1-GE3
40V 2.3A 82mΩ@3A,10V 750mW 3V@250uA P Channel SOT-23-3 MOSFETs ROHS

40V 2.3A 82mΩ@3A,10V 750mW 3V@250uA P Channel SOT-23-3 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI2319DS-T1-GE3TR-ND 278-SI2319DS-T1-GE3 064394-SI2319DS-T1-GE3 SI2319DS-T1-GE3 84R8030 15R4910 SI2319DS-T1-GE3 SI2319DS-T1-GE3 SI2319DS-T1-GE3
Product Name Single FETs, MOSFETs 40V 2.3A SOT-23 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-GE3 Single FETs, MOSFETs P Channel Mosfet; Channel Type Vishay P Channel Mosfet, Full Reel; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23
PD 750 milliwatts 750 milliwatts 750 milliwatts 750 milliwatts 750 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
V(BR)DSS 40 volts 40 volts 40 volts
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