Manufacturer: Vishay
Win Source Part Number: 028380-SI2314EDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Family Name: Si2314EDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.77A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 14nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 33 mOhm @ 5A, 4.5V
Alternative Parts (Cross-Reference): RUR040N02HZGTL; TSM2314CX RF; RM2312; RUR040N02TL;
Introduction Date: September 06, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
MOSFET N-CH 20V 3.77A SOT23-3
N-Channel 20V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 20V 3.77A SOT23-3
N CHANNEL MOSFET, 20V, 4.9A, TO-236; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028380-SI2314EDS-T1-E3 | SI2314EDS-T1-E3 | SI2314EDS-T1-E3DKR-ND | SI2314EDS-T1-E3 | 06J7576 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2314EDS-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 20V, 4.9A, To-236; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 20 volts | 20 volts | |||
| PD | 750 milliwatts | 750 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
