Vishay Intertechnology, Inc. Single FETs, MOSFETs SI2309CDS-T1-E3

Description
P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Description
P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2309CDS-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2309CDS-T1-E3TR-ND
Single FETs, MOSFETs SI2309CDS-T1-E3TR-ND
P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2309CDS-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2309CDS-T1-E3CT-ND
Single FETs, MOSFETs SI2309CDS-T1-E3CT-ND
P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2309CDS-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2309CDS-T1-E3DKR-ND
Single FETs, MOSFETs SI2309CDS-T1-E3DKR-ND
P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2309CDS-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2309CDS-T1-E3
Single FETs, MOSFETs SI2309CDS-T1-E3
MOSFET P-CH 60V 1.6A SOT23-3

MOSFET P-CH 60V 1.6A SOT23-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2309CDS-T1-E3 - 141732-SI2309CDS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2309CDS-T1-E3
141732-SI2309CDS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2309CDS-T1-E3 141732-SI2309CDS-T1-E3
Manufacturer: Vishay Win Source Part Number: 141732-SI2309CDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.6A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 4.1nC @ 4.5V Max Input Capacitance: 210pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 345 mOhm @ 1.25A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 141732-SI2309CDS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.6A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4.1nC @ 4.5V
Max Input Capacitance: 210pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 345 mOhm @ 1.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET -60V Vds 20V Vgs SOT-23

MOSFET -60V Vds 20V Vgs SOT-23

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2309CDS-T1-E3
Triode/MOS Tube/Transistor >> MOSFETs SI2309CDS-T1-E3
60V 1.6A 345mΩ@1.25A,10V 3V@250uA P Channel TO-236-3 MOSFETs ROHS

60V 1.6A 345mΩ@1.25A,10V 3V@250uA P Channel TO-236-3 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2309CDS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2309CDS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2309CDS-T1-E3
MOSFET P-CH 60V 1.6A SOT23-3

MOSFET P-CH 60V 1.6A SOT23-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI2309CDS-T1-E3TR-ND SI2309CDS-T1-E3 141732-SI2309CDS-T1-E3 SI2309CDS-T1-E3 SI2309CDS-T1-E3 SI2309CDS-T1-E3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2309CDS-T1-E3 MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts 60 volts
IDSS 1600 milliamps
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