MOSFET N-CH 60V 2.3A SOT23-3
Manufacturer: Vishay
Win Source Part Number: 028374-SI2308BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Family Name: Si2308BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.3A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 6.8nC @ 10V
Max Input Capacitance: 190pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 156 mOhm @ 1.9A, 10V
Alternative Parts (Cross-Reference): RSR020N06FRATL; RSR020N06HZGTL; RQ5L020SNTL;
Introduction Date: March 13, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial
N CHANNEL MOSFET, 60V, 2.3A, TO-236; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 10 V, 3 V RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 2.3A, TO-236, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W
MOSFET N-CH 60V 2.3A SOT23-3
MOSFET 60V Vds 20V Vgs SOT-23
| ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2308BDS-T1-GE3 | 028374-SI2308BDS-T1-GE3 | 16P3708 | 47Y1306 | 70026410 | SI2308BDS-T1-GE3 | SI2308BDS-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2308BDS-T1-GE3 | N Channel Mosfet, 60V, 2.3A, To-236; Channel Type Vishay | Mosfet Transistor, N Channel, 2.3 A, 60 V, 0.13 Ohm, 10 V, 3 V Rohs Compliant Vishay | MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 2300 milliamps | 2300 milliamps |
