Manufacturer: Vishay
Win Source Part Number: 028373-SI2307BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 380pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 78 mOhm @ 3.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
P-CH MOSFET, 30V, 2.5A, 78mR, TO-236, Small Signal Product overview: SI2307BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2307BDS-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 30V 2.5A SOT23-3
30V 2.5A 750mW 78mΩ@10V,3.2A 3V@250uA P Channel SOT-23 MOSFETs ROHS
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:750mW RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 2.5A TO-236, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes
MOSFET, P-CH, -30V, -2.5A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.063ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 2.5A SOT23-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028373-SI2307BDS-T1-E3 | 278-SI2307BDS-T1-E3 | SI2307BDS-T1-E3CT-ND | SI2307BDS-T1-E3 | SI2307BDS-T1-E3 | SI2307BDS-T1-E3 | 64R4907 | 02J5180 | 54AH6883 | SI2307BDS-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2307BDS-T1-E3 | 30V 2.5A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | P Channel Mosfet; Channel Type Vishay | P Channel Mosfet, -30V, 2.5A To-236, Full Reel; Channel Type Vishay | Mosfet, P-Ch, -30V, -2.5A, Sot-23-3; Transistor Polarity Vishay | Single FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | TO-3 | TO-3 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 |
