Manufacturer: Vishay
Win Source Part Number: 028369-SI2305CDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Family Name: Si2305CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 5.8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 30nC @ 8V
Max Input Capacitance: 960pF @ 4V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 35 mOhm @ 4.4A, 4.5V
Alternative Parts (Cross-Reference): SI2305-TP; SI2305-TP-HF ; TSM2305CX RFG;
Introduction Date: July 07, 2009
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Portable Devices
P-Channel MOSFET, 8V, 4.4A, SOT-23-3 Product overview: SI2305CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 8V, 4.4A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 4.4A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2305CDS-T1-GE3
P-Channel 8V 5.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 8V 5.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 8V 5.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET, P CHANNEL, -8V, -5.8A, SOT-23-3; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:5.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; MSL:-RoHS Compliant: Yes
MOSFET, P CHANNEL, -8V, -5.8A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:5.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.7W RoHS Compliant: Yes
MOSFET P-CH 8V 5.8A SOT23-3
MOSFET P-CH 8V 5.8A SOT23-3
8V 5.8A 35mΩ@4.5V,4.4A 1V@250uA P Channel SOT-23 MOSFETs ROHS
MOSFET 8.0V 5.8A 1.7W 35mohm @ 4.5V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028369-SI2305CDS-T1-GE3 | 278-SI2305CDS-T1-GE3 | SI2305CDS-T1-GE3DKR-ND | 7103248 | 7103248P | 55R1909 | 15R4901 | SI2305CDS-T1-GE3 | SI2305CDS-T1-GE3 | SI2305CDS-T1-GE3 | SI2305CDS-T1-GE3 | 880-SI2305CDS-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305CDS-T1-GE3 | P-Channel 8V 4.4A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Mosfet, P Channel, -8V, -5.8A, Sot-23-3; Channel Type Vishay | Mosfet, P Channel, -8V, -5.8A, Sot-23-3, Full Reel; Channel Type Vishay | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET 8.0V 5.8A 1.7W 35mohm @ 4.5V |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 8 volts | 8 volts | 8 volts | -8 volts | ||||||||
| PD | 960 to 1700 milliwatts | 1700 milliwatts | 1700 milliwatts | 960 milliwatts | 960 milliwatts | 960 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; Sot-23 | SOT23; SOT-23 | TO-3; SOT23 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 |
