Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303CDS-T1-GE3 SI2303CDS-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028364-SI2303CDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta), 2.3W (Tc) Family Name: Si2303CDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 155pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 1.9A, 10V Alternative Parts (Cross-Reference): ZXMP3A13FTA; ZXMP3A13FTC; ZXMP3A13F; Introduction Date: April 17, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 028364-SI2303CDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta), 2.3W (Tc) Family Name: Si2303CDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 155pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 1.9A, 10V Alternative Parts (Cross-Reference): ZXMP3A13FTA; ZXMP3A13FTC; ZXMP3A13F; Introduction Date: April 17, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303CDS-T1-GE3 - 028364-SI2303CDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303CDS-T1-GE3
028364-SI2303CDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303CDS-T1-GE3 028364-SI2303CDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028364-SI2303CDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta), 2.3W (Tc) Family Name: Si2303CDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 155pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 1.9A, 10V Alternative Parts (Cross-Reference): ZXMP3A13FTA; ZXMP3A13FTC; ZXMP3A13F; Introduction Date: April 17, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 028364-SI2303CDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Family Name: Si2303CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.7A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 155pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 1.9A, 10V
Alternative Parts (Cross-Reference): ZXMP3A13FTA; ZXMP3A13FTC; ZXMP3A13F;
Introduction Date: April 17, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SI2303CDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2303CDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2303CDS-T1-GE3DKR-ND
P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2303CDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2303CDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2303CDS-T1-GE3CT-ND
P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2303CDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2303CDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2303CDS-T1-GE3TR-ND
P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
MOSFETs - 7103241 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7103241
MOSFETs 7103241
MOSFET P-Channel 30V 1.9A SOT23

MOSFET P-Channel 30V 1.9A SOT23

Supplier's Site
MOSFETs - 7103241P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7103241P
MOSFETs 7103241P
MOSFET P-Channel 30V 1.9A SOT23

MOSFET P-Channel 30V 1.9A SOT23

Supplier's Site
MOSFETs - 1461425 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1461425
MOSFETs 1461425
MOSFET P-Channel 30V 1.9A SOT23

MOSFET P-Channel 30V 1.9A SOT23

Supplier's Site
Single FETs, MOSFETs - SI2303CDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2303CDS-T1-GE3
Single FETs, MOSFETs SI2303CDS-T1-GE3
MOSFET P-CH 30V 2.7A SOT23-3

MOSFET P-CH 30V 2.7A SOT23-3

Supplier's Site Datasheet
MOSFET -30V Vds 20V Vgs SOT-23

MOSFET -30V Vds 20V Vgs SOT-23

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2303CDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2303CDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2303CDS-T1-GE3
MOSFET P-CH 30V 2.7A SOT23-3

MOSFET P-CH 30V 2.7A SOT23-3

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2303CDS-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI2303CDS-T1-GE3
30V 2.7A 190mΩ@10V,1.9A 3V@250uA P Channel SOT-23(TO-236) MOSFETs ROHS

30V 2.7A 190mΩ@10V,1.9A 3V@250uA P Channel SOT-23(TO-236) MOSFETs ROHS

Supplier's Site Datasheet
Mosfet, P Ch, -30V, -2.7A, Sot-23-3, Full Reel; Channel Type Vishay - 29X0521 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Ch, -30V, -2.7A, Sot-23-3, Full Reel; Channel Type Vishay
29X0521
Mosfet, P Ch, -30V, -2.7A, Sot-23-3, Full Reel; Channel Type Vishay 29X0521
MOSFET, P CH, -30V, -2.7A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes

MOSFET, P CH, -30V, -2.7A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, P Channel, -2.7 A, -30 V, 0.158 Ohm, -10 V, -3 V Rohs Compliant Vishay - 23T8494 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -2.7 A, -30 V, 0.158 Ohm, -10 V, -3 V Rohs Compliant Vishay
23T8494
Mosfet Transistor, P Channel, -2.7 A, -30 V, 0.158 Ohm, -10 V, -3 V Rohs Compliant Vishay 23T8494
MOSFET Transistor, P Channel, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P-Ch, 30V, 2.7A, Sot-23 Rohs Compliant Vishay - 96AJ0104 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 2.7A, Sot-23 Rohs Compliant Vishay
96AJ0104
Mosfet, P-Ch, 30V, 2.7A, Sot-23 Rohs Compliant Vishay 96AJ0104
MOSFET, P-CH, 30V, 2.7A, SOT-23 ROHS COMPLIANT: YES

MOSFET, P-CH, 30V, 2.7A, SOT-23 ROHS COMPLIANT: YES

Supplier's Site
MOSFET P-CH 30V 2.7A SOT23-3 - 880-SI2303CDS-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 30V 2.7A SOT23-3
880-SI2303CDS-T1-GE3
MOSFET P-CH 30V 2.7A SOT23-3 880-SI2303CDS-T1-GE3
MOSFET P-CH 30V 2.7A SOT23-3

MOSFET P-CH 30V 2.7A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028364-SI2303CDS-T1-GE3 SI2303CDS-T1-GE3DKR-ND 7103241 7103241P SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 29X0521 23T8494 96AJ0104 880-SI2303CDS-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303CDS-T1-GE3 Single FETs, MOSFETs MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Mosfet, P Ch, -30V, -2.7A, Sot-23-3, Full Reel; Channel Type Vishay Mosfet Transistor, P Channel, -2.7 A, -30 V, 0.158 Ohm, -10 V, -3 V Rohs Compliant Vishay Mosfet, P-Ch, 30V, 2.7A, Sot-23 Rohs Compliant Vishay MOSFET P-CH 30V 2.7A SOT23-3
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 30 volts 30 volts 30 volts -30 volts
PD 1000 to 2300 milliwatts 1000 milliwatts 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; Sot-23 SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23 TO-3; SOT23 TO-3 TO-3; SOT23
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