P-CH MOSFET, 30V, 1.9A, 190mR, SOT-23-3 Product overview: SI2303CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.9A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2303CDS-T1-GE3
P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay
Win Source Part Number: 028364-SI2303CDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Family Name: Si2303CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.7A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 155pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 1.9A, 10V
Alternative Parts (Cross-Reference): ZXMP3A13FTA; ZXMP3A13FTC; ZXMP3A13F;
Introduction Date: April 17, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
MOSFET P-CH 30V 2.7A SOT23-3
MOSFET P-CH 30V 2.7A SOT23-3
MOSFET -30V Vds 20V Vgs SOT-23
MOSFET P-CH 30V 2.7A SOT23-3
MOSFET, P CH, -30V, -2.7A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes
MOSFET Transistor, P Channel, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V RoHS Compliant: Yes
MOSFET, P-CH, 30V, 2.7A, SOT-23 ROHS COMPLIANT: YES
30V 2.7A 190mΩ@10V,1.9A 3V@250uA P Channel SOT-23(TO-236) MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2303CDS-T1-GE3 | SI2303CDS-T1-GE3DKR-ND | 028364-SI2303CDS-T1-GE3 | SI2303CDS-T1-GE3 | 7103241 | 7103241P | 880-SI2303CDS-T1-GE3 | SI2303CDS-T1-GE3 | SI2303CDS-T1-GE3 | 29X0521 | 23T8494 | 96AJ0104 | SI2303CDS-T1-GE3 |
| Product Name | 30V 1.9A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303CDS-T1-GE3 | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET P-CH 30V 2.7A SOT23-3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Ch, -30V, -2.7A, Sot-23-3, Full Reel; Channel Type Vishay | Mosfet Transistor, P Channel, -2.7 A, -30 V, 0.158 Ohm, -10 V, -3 V Rohs Compliant Vishay | Mosfet, P-Ch, 30V, 2.7A, Sot-23 Rohs Compliant Vishay | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||||
| PD | 2300 milliwatts | 1000 to 2300 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | ||||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; Sot-23 | SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | TO-3 | TO-3; SOT23 | SOT23 | |||
| V(BR)DSS | 30 volts | 30 volts | -30 volts | 30 volts |
