Vishay Intertechnology, Inc. Single FETs, MOSFETs SI2122DS-T1-BE3

N-Channel 100 V MOSFET in SOT-23 package, designed for DC/DC converters, load switch, and mobile power management. Maximum continuous drain current is 2.17 A at 25 °C and 1.65 A at 150 °C case temperature. Drain-source on-state resistance is 0.160 Ω maximum at 10 V gate-source voltage and 0.167 Ω maximum at 7.5 V. Total gate charge is 2.9 nC typical. Operating junction and storage temperature range is -55 °C to +150 °C. Maximum junction-to-ambient thermal resistance is 130 °C/W under steady-state conditions. Device is lead-free and halogen-free.