MOSFET 2N-CH 20V 0.66A SC70-6
Mosfet Array 2 N-Channel (Dual) 20V 660mA 270mW Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 20V 660mA 270mW Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 20V 660mA 270mW Surface Mount SC-70-6
2-Ch N-Ch JFET, 20V, 660mA, 385mR, SC-70, Surface Mount Product overview: SI1902DL-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 660mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 660mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1902DL-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028352-SI1902DL-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si1902DL
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 270mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 660mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.2nC @ 4.5V
Maximum Rds On at Id,Vgs: 385 mOhm @ 660mA, 4.5V
Alternative Parts (Cross-Reference): AO7800; BSD235NH6327XTSA1; BSD235NL6327ZT;
Introduction Date: June 05, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
MOSFET, Dual, N-Channel, 20V, 0.70A, SOT-363
MOSFET 2N-CH 20V 0.66A SC70-6
DUAL N CHANNEL MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.385ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:660mA; On Resistance Rds(on):0.32ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI1902DL-T1-E3 | SI1902DL-T1-E3DKR-ND | 278-SI1902DL-T1-E3 | 028352-SI1902DL-T1-E3 | 70026095 | SI1902DL-T1-E3 | 35K3450 | 06J7550 | SI1902DL-T1-E3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | SMD 20V 660mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1902DL-T1-E3 | MOSFET, Dual, N-Channel, 20V, 0.70A, SOT-363 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N Channel Mosfet, Full Reel; Transistor Polarity Vishay | Dual N Channel Mosfet, 20V, Sc-70; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| IDSS | 660 milliamps | 700 milliamps | 660 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
