MOSFET N/P-CH 20V 1.13A SC70-6
Mosfet Array N and P-Channel 20V 1.13A, 880mA 570mW Surface Mount SC-70-6
Manufacturer: Vishay
Win Source Part Number: 1095705-SI1563DH-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si1563DH
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 570mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.13A, 880mA
Gate-Source Threshold Voltage: 1V @ 100μA
Max Gate Charge: 2nC @ 4.5V
Maximum Rds On at Id,Vgs: 280 mOhm @ 1.13A, 4.5V
Alternative Parts (Cross-Reference): PMGD290UCEA; PMGD290UCEAX; AO7600; Si1563DH-E3;
Introduction Date: August 28, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 20V 1.13A SC70-6 Product overview: SI1563DH-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.13A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI1563DH-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 20V 1.13A SC70-6
MOSFET N/P-CH 20V 1.13A SC70-6
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI1563DH-T1-E3 | SI1563DH-T1-E3TR-ND | 1095705-SI1563DH-T1-E3 | 289-SI1563DH-T1-E3 | 880-SI1563DH-T1-E3 | SI1563DH-T1-E3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1563DH-T1-E3 | 20V 1.13A MOSFET Transistor | MOSFET N/P-CH 20V 1.13A SC70-6 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||
| IDSS | 1130 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |