Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1471DH-T1-E3 SI1471DH-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 064384-SI1471DH-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 9.8nC @ 4.5V Max Input Capacitance: 445pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 064384-SI1471DH-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 9.8nC @ 4.5V Max Input Capacitance: 445pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1471DH-T1-E3 - 064384-SI1471DH-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1471DH-T1-E3
064384-SI1471DH-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1471DH-T1-E3 064384-SI1471DH-T1-E3
Manufacturer: Vishay Win Source Part Number: 064384-SI1471DH-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 9.8nC @ 4.5V Max Input Capacitance: 445pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 064384-SI1471DH-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.7A (Tc)
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 9.8nC @ 4.5V
Max Input Capacitance: 445pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI1471DH-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1471DH-T1-E3TR-ND
Single FETs, MOSFETs SI1471DH-T1-E3TR-ND
P-Channel 30V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6

P-Channel 30V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6

Buy Now Datasheet
Singapore
30V 2.7A MOSFET Transistor
278-SI1471DH-T1-E3
30V 2.7A MOSFET Transistor 278-SI1471DH-T1-E3
MOSFET P-CH 30V 2.7A SC70-6 Product overview: SI1471DH-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1471DH-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 2.7A SC70-6 Product overview: SI1471DH-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1471DH-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, P Channel, -30V, -2.7A, Sot-363-6; Channel Type Vishay - 69W7179 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, -2.7A, Sot-363-6; Channel Type Vishay
69W7179
Mosfet, P Channel, -30V, -2.7A, Sot-363-6; Channel Type Vishay 69W7179
MOSFET, P CHANNEL, -30V, -2.7A, SOT-363-6; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, -2.7A, SOT-363-6; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1471DH-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1471DH-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1471DH-T1-E3
MOSFET P-CH 30V 2.7A SC70-6

MOSFET P-CH 30V 2.7A SC70-6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 064384-SI1471DH-T1-E3 SI1471DH-T1-E3TR-ND 278-SI1471DH-T1-E3 69W7179 SI1471DH-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1471DH-T1-E3 Single FETs, MOSFETs 30V 2.7A MOSFET Transistor Mosfet, P Channel, -30V, -2.7A, Sot-363-6; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 30 volts
PD 1500 to 2780 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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