Vishay Intertechnology, Inc. Single FETs, MOSFETs SI1406DH-T1-E3

Description
N-Channel 20V 3.1A (Ta) 1W (Ta) Surface Mount SC-70-6
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Description
N-Channel 20V 3.1A (Ta) 1W (Ta) Surface Mount SC-70-6
Request a Quote Datasheet

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Single FETs, MOSFETs - SI1406DH-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1406DH-T1-E3TR-ND
Single FETs, MOSFETs SI1406DH-T1-E3TR-ND
N-Channel 20V 3.1A (Ta) 1W (Ta) Surface Mount SC-70-6

N-Channel 20V 3.1A (Ta) 1W (Ta) Surface Mount SC-70-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1406DH-T1-E3 - 099475-SI1406DH-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1406DH-T1-E3
099475-SI1406DH-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1406DH-T1-E3 099475-SI1406DH-T1-E3
Manufacturer: Vishay Win Source Part Number: 099475-SI1406DH-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 7.5nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.9A, 4.5V Alternative Parts (Cross-Reference): FDG327N; Si1406DH; Si1406DH-T1; Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 099475-SI1406DH-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.1A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.9A, 4.5V
Alternative Parts (Cross-Reference): FDG327N; Si1406DH; Si1406DH-T1;
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1406DH-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1406DH-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1406DH-T1-E3
MOSFET N-CH 20V 3.1A SC70-6

MOSFET N-CH 20V 3.1A SC70-6

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1406DH-T1-E3TR-ND 099475-SI1406DH-T1-E3 SI1406DH-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1406DH-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SC-70-6 (SOT-363) 6-TSSOP, SC-88, SOT-363
V(BR)DSS 20 volts
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