Vishay Precision Group Single FETs, MOSFETs SI1401EDH-T1-GE3

Description
MOSFET P-CH 12V 4A SC70-6
Request a Quote Datasheet
Description
MOSFET P-CH 12V 4A SC70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI1401EDH-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI1401EDH-T1-GE3
Single FETs, MOSFETs SI1401EDH-T1-GE3
MOSFET P-CH 12V 4A SC70-6

MOSFET P-CH 12V 4A SC70-6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1401EDH-T1-GE3 - 1095682-SI1401EDH-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1401EDH-T1-GE3
1095682-SI1401EDH-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1401EDH-T1-GE3 1095682-SI1401EDH-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095682-SI1401EDH-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 36nC @ 8V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 34 mOhm @ 5.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095682-SI1401EDH-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 36nC @ 8V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 34 mOhm @ 5.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
P-Channel -12V 4A MOSFET Transistor
278-SI1401EDH-T1-GE3
P-Channel -12V 4A MOSFET Transistor 278-SI1401EDH-T1-GE3
P-Channel MOSFET, -12V, 4A, 34mR, SOT-363 Product overview: SI1401EDH-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1401EDH-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel MOSFET, -12V, 4A, 34mR, SOT-363 Product overview: SI1401EDH-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1401EDH-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI1401EDH-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1401EDH-T1-GE3TR-ND
Single FETs, MOSFETs SI1401EDH-T1-GE3TR-ND
P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SI1401EDH-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1401EDH-T1-GE3CT-ND
Single FETs, MOSFETs SI1401EDH-T1-GE3CT-ND
P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SI1401EDH-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1401EDH-T1-GE3DKR-ND
Single FETs, MOSFETs SI1401EDH-T1-GE3DKR-ND
P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Buy Now Datasheet
MOSFETs - 1807898 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807898
MOSFETs 1807898
P-Ch MOSFET SC-70-6 (SOT-363) 12V 34mohm

P-Ch MOSFET SC-70-6 (SOT-363) 12V 34mohm

Supplier's Site
MOSFETs - 1807264 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807264
MOSFETs 1807264
P-Ch MOSFET SC-70-6 (SOT-363) 12V 34mohm

P-Ch MOSFET SC-70-6 (SOT-363) 12V 34mohm

Supplier's Site
MOSFETs - 1807898P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807898P
MOSFETs 1807898P
P-Ch MOSFET SC-70-6 (SOT-363) 12V 34mohm

P-Ch MOSFET SC-70-6 (SOT-363) 12V 34mohm

Supplier's Site
Mosfet Transistor, P Channel, -4 A, -12 V, 0.072 Ohm, -1.5 V, 400 Mv Rohs Compliant Vishay - 97W2622 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -4 A, -12 V, 0.072 Ohm, -1.5 V, 400 Mv Rohs Compliant Vishay
97W2622
Mosfet Transistor, P Channel, -4 A, -12 V, 0.072 Ohm, -1.5 V, 400 Mv Rohs Compliant Vishay 97W2622
MOSFET Transistor, P Channel, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV RoHS Compliant: Yes

Supplier's Site
Mosfet, P Channel, -12V, -4A, Sot-363-6, Full Reel; Channel Type Vishay - 86R3831 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -12V, -4A, Sot-363-6, Full Reel; Channel Type Vishay
86R3831
Mosfet, P Channel, -12V, -4A, Sot-363-6, Full Reel; Channel Type Vishay 86R3831
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.5V; Power Dissipation:2.8W RoHS Compliant: Yes

MOSFET, P CHANNEL, -12V, -4A, SOT-363-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.5V; Power Dissipation:2.8W RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -12V, -4A, Sot-363-6; Channel Type Vishay - 69W7175 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -12V, -4A, Sot-363-6; Channel Type Vishay
69W7175
Mosfet, P Channel, -12V, -4A, Sot-363-6; Channel Type Vishay 69W7175
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

MOSFET, P CHANNEL, -12V, -4A, SOT-363-6; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET -12V Vds 10V Vgs SC70-6

MOSFET -12V Vds 10V Vgs SC70-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1401EDH-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1401EDH-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1401EDH-T1-GE3
MOSFET P-CH 12V 4A SC70-6

MOSFET P-CH 12V 4A SC70-6

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey RS Components, Ltd. Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1401EDH-T1-GE3 1095682-SI1401EDH-T1-GE3 278-SI1401EDH-T1-GE3 SI1401EDH-T1-GE3TR-ND 1807898 97W2622 86R3831 69W7175 SI1401EDH-T1-GE3 SI1401EDH-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1401EDH-T1-GE3 P-Channel -12V 4A MOSFET Transistor Single FETs, MOSFETs MOSFETs Mosfet Transistor, P Channel, -4 A, -12 V, 0.072 Ohm, -1.5 V, 400 Mv Rohs Compliant Vishay Mosfet, P Channel, -12V, -4A, Sot-363-6, Full Reel; Channel Type Vishay Mosfet, P Channel, -12V, -4A, Sot-363-6; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 12 volts 12 volts
IDSS 4000 milliamps 4000 milliamps 4000 milliamps
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