Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI1073X-T1-E3

Description
Win Source Part Number: 1277496-SI1073X-T1-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 980mA (Ta) Rds On (Max) @ Id, Vgs: 173mOhm @ 980mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 236mW (Ta) Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89 (SOT-563F) Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Vishay Siliconix Base Product Number: SI1073 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277496-SI1073X-T1-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 980mA (Ta) Rds On (Max) @ Id, Vgs: 173mOhm @ 980mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 236mW (Ta) Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89 (SOT-563F) Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Vishay Siliconix Base Product Number: SI1073 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Datasheet
Datasheet Summary
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The Si1073X is a P-channel MOSFET designed for load switch applications, housed in an SC-89 (6-lead) package with a top view layout of D-S-D-G-G-S. It has a drain-source voltage rating of -30 V and a continuous drain current of -0.98 A at 25 °C and -0.78 A at 70 °C. The on-state resistance is 0.173 Ω at -10 V gate-source voltage and 0.243 Ω at -4.5 V. The device is halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC. Operating junction and storage temperatures range from -55 °C to 150 °C. Thermal resistance is 540 °C/W steady state. Gate charge totals 9.45 nC at -10 V, with input capacitance of 265 pF at 15 V. All specifications are ensured by design and tested under pulse conditions with duty cycle ≤ 2%.

Datasheet Summary
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The Si1073X is a P-channel MOSFET designed for load switch applications, housed in an SC-89 (6-lead) package with a top view layout of D-S-D-G-G-S. It has a drain-source voltage rating of -30 V and a continuous drain current of -0.98 A at 25 °C and -0.78 A at 70 °C. The on-state resistance is 0.173 Ω at -10 V gate-source voltage and 0.243 Ω at -4.5 V. The device is halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC. Operating junction and storage temperatures range from -55 °C to 150 °C. Thermal resistance is 540 °C/W steady state. Gate charge totals 9.45 nC at -10 V, with input capacitance of 265 pF at 15 V. All specifications are ensured by design and tested under pulse conditions with duty cycle ≤ 2%.

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277496-SI1073X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277496-SI1073X-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277496-SI1073X-T1-E3
Win Source Part Number: 1277496-SI1073X-T1-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 980mA (Ta) Rds On (Max) @ Id, Vgs: 173mOhm @ 980mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 236mW (Ta) Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89 (SOT-563F) Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Vishay Siliconix Base Product Number: SI1073 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277496-SI1073X-T1-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 980mA (Ta)
Rds On (Max) @ Id, Vgs: 173mOhm @ 980mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Base Product Number: SI1073
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1277496-SI1073X-T1-E3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity P-Channel
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