N-Channel MOSFET, 30V, 1.2A, 99mR, SC-89, Surface Mount Product overview: SI1070X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1070X-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
N-Channel 30V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
N-Channel 30V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
Manufacturer: Vishay
Win Source Part Number: 028338-SI1070X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 236mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1.55V @ 250μA
Max Gate Charge: 8.3nC @ 5V
Max Input Capacitance: 385pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 99 mOhm @ 1.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 1.2A SC89-6
MOSFET 30V 1.2A 0.236W 99mohm @ 4.5V
MOSFET, N-CH, 30V, 1.2A, SC-89 ROHS COMPLIANT: YES
MOSFET, N CHANNEL, 30V, 1.2A, SC-89-6, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:236mW RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI1070X-T1-GE3 | SI1070X-T1-GE3DKR-ND | 028338-SI1070X-T1-GE3 | SI1070X-T1-GE3 | SI1070X-T1-GE3 | 880-SI1070X-T1-GE3 | 57AJ0422 | 11X2604 |
| Product Name | N-Channel SMD 30V 1.2A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1070X-T1-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 30V 1.2A 0.236W 99mohm @ 4.5V | Mosfet, N-Ch, 30V, 1.2A, Sc-89 Rohs Compliant Vishay | Mosfet, N Channel, 30V, 1.2A, Sc-89-6, Full Reel; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 236 milliwatts | 236 milliwatts | 236 milliwatts | 236 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT-563, SOT-666 | SOT3; SC-89-6 | 2.5V, 4.5V | TO-3 | TO-3 | |||
| V(BR)DSS | 30 volts | 30 volts |
