Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI1051X-T1-E3

Description
Win Source Part Number: 1277494-SI1051X-T1-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 8 V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 236mW (Ta) Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89 (SOT-563F) Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 4 V Vgs (Max): ±5V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Vishay Siliconix Base Product Number: SI1051 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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Description
Win Source Part Number: 1277494-SI1051X-T1-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 8 V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 236mW (Ta) Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89 (SOT-563F) Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 4 V Vgs (Max): ±5V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Vishay Siliconix Base Product Number: SI1051 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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Datasheet
Datasheet Summary
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The Si1051X is a P-channel MOSFET for load switching in portable applications, housed in an SC-89 (6-lead) package. It has a drain-source voltage rating of -8 V and continuous drain current ratings of 1.2 A at 25 °C and 0.927 A at 70 °C. The on-state resistance is 0.122 Ω at -4.5 V gate-source voltage and 1.2 A drain current. Total gate charge is 5.91 nC typical at -4.5 V. The device is compliant with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. Thermal resistance is 650 °C/W maximum under steady-state conditions. Operating junction and storage temperature range is -55 °C to 150 °C.

Datasheet Summary
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The Si1051X is a P-channel MOSFET for load switching in portable applications, housed in an SC-89 (6-lead) package. It has a drain-source voltage rating of -8 V and continuous drain current ratings of 1.2 A at 25 °C and 0.927 A at 70 °C. The on-state resistance is 0.122 Ω at -4.5 V gate-source voltage and 1.2 A drain current. Total gate charge is 5.91 nC typical at -4.5 V. The device is compliant with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. Thermal resistance is 650 °C/W maximum under steady-state conditions. Operating junction and storage temperature range is -55 °C to 150 °C.

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277494-SI1051X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277494-SI1051X-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277494-SI1051X-T1-E3
Win Source Part Number: 1277494-SI1051X-T1-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 8 V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 236mW (Ta) Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89 (SOT-563F) Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 4 V Vgs (Max): ±5V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Vishay Siliconix Base Product Number: SI1051 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

Win Source Part Number: 1277494-SI1051X-T1-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 8 V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 4 V
Vgs (Max): ±5V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Base Product Number: SI1051
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1277494-SI1051X-T1-E3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity P-Channel
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