Mosfet Array 2 N-Channel (Dual) 30V 610mA (Ta) 220mW Surface Mount SC-89-6
Mosfet Array 2 N-Channel (Dual) 30V 610mA (Ta) 220mW Surface Mount SC-89-6
Mosfet Array 2 N-Channel (Dual) 30V 610mA (Ta) 220mW Surface Mount SC-89-6
MOSFET 2 N-CH 30V 610MA SC89-6
Small Signal Field-Effect Transistor, 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SC-89, 6 PIN Product overview: SI1036X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1036X-T1-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1278491-SI1036X-T1-G
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 220mW
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Other Names: 742-SI1036X-T1-GE3CT
Base Product Number: SI1036
MOSFET 2N-CH 30V 0.61A SC89-6
MOSFET, DUAL N-CH, 30V, SC-89 ROHS COMPLIANT: YES
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SI1036X-T1-GE3DKR-ND | SI1036X-T1-GE3 | 278-SI1036X-T1-GE3 | 1278491-SI1036X-T1-GE3 | SI1036X-T1-GE3 | SI1036X-T1-GE3 | 26AK5815 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | N-Channel 30V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 30V, Sc-89 Rohs Compliant Vishay |
| Package Type | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT3 | TO-3 | |||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts |
