Mosfet Array 2 N-Channel (Dual) 60V 305mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 N-Channel (Dual) 60V 305mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 N-Channel (Dual) 60V 305mA 250mW Surface Mount SC-89 (SOT-563F)
MOSFET 2N-CH 60V 0.305A SC89-6
2 N-Ch JFET 60V 305mA 1.4R SOT-563F SM T/R Product overview: SI1026X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 305mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 305mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1026X-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028332-SI1026X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si1026X
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 305mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 30pF @ 25V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): 2N7002PV,115; 2N7002PV; NTZD5110NT1GNTZD5110
Introduction Date: April 18, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Portable Devices
MOSFET 2N-CH 60V 0.305A SC89
60V 305mA 1.4Ω@10V,500mA 250mW 2.5V@250uA 2 N-Channel SC-89 MOSFETs ROHS
MOSFET, N CHANNEL, 60V, 0.305A, SC-89-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:305mA; On Resistance Rds(on):1.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 0.305A, SC-89-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:305mA; On Resistance Rds(on):1.4ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI1026X-T1-GE3DKR-ND | SI1026X-T1-GE3 | 278-SI1026X-T1-GE3 | 028332-SI1026X-T1-GE3 | SI1026X-T1-GE3 | 17930-SI1026X-T1-GE3 | 16P3678 | SI1026X-T1-GE3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | 60V 305mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1026X-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 60V 305mA 1.4Ω@10V,500mA 250mW 2.5V@250uA 2 N-Channel SC-89 MOSFETs ROHS | Mosfet, N Channel, 60V, 0.305A, Sc-89-6; Transistor Polarity Vishay | MOSFET |
| Package Type | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT3; SC-89-6 | TO-3 | ||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 305 milliamps | 305 milliamps |
