N-Channel JFET, 20V, 630mA, 396mR Rds(on), Surface Mount Product overview: SI1012CR-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 630mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 630mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012CR-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028321-SI1012CR-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 240mW (Ta)
Family Name: Si1012CR
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-75A
Dimension: SC-75, SOT-416
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2nC @ 8V
Max Input Capacitance: 43pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 396 mOhm @ 600mA, 4.5V
Alternative Parts (Cross-Reference): DMG1012T-7; DMG1012T; DMG1012TQ-7; PMR290UNE;
Introduction Date: March 20, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V SC75A
N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A
N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A
N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A
MOSFET, N CHANNEL, 20V, 0.63A, SC-75A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes
N-CHANNEL 20-V (D-S) MOSFET
MOSFET N-CH 20V SC75A
VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET |
| Product Number | 278-SI1012CR-T1-GE3 | 028321-SI1012CR-T1-GE3 | SI1012CR-T1-GE3 | SI1012CR-T1-GE3TR-ND | 64T4048 | 26AK9913 | SI1012CR-T1-GE3 | SI1012CR-T1-GE3 | 880-SI1012CR-T1-GE3 |
| Product Name | N-Channel SMD 20V 630mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012CR-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Channel, 20V, 0.63A, Sc-75A; Channel Type Vishay | N-Channel 20-V (D-S) Mosfet Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 240 milliwatts | 240 milliwatts | 240 milliwatts | 240 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||||
| Package Type | SOT3; SC-75A | SC-75, SOT-416 | SC-75, SOT-416 | TO-3 | TO-3 | SC-75, SOT-416 |
