Vishay Precision Group N-Channel SMD 20V 630mA MOSFET Transistor SI1012CR-T1-GE3

Description
N-Channel JFET, 20V, 630mA, 396mR Rds(on), Surface Mount Product overview: SI1012CR-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 630mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 630mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012CR-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
N-Channel JFET, 20V, 630mA, 396mR Rds(on), Surface Mount Product overview: SI1012CR-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 630mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 630mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012CR-T1-GE3 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
N-Channel SMD 20V 630mA MOSFET Transistor
278-SI1012CR-T1-GE3
N-Channel SMD 20V 630mA MOSFET Transistor 278-SI1012CR-T1-GE3
N-Channel JFET, 20V, 630mA, 396mR Rds(on), Surface Mount Product overview: SI1012CR-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 630mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 630mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012CR-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel JFET, 20V, 630mA, 396mR Rds(on), Surface Mount Product overview: SI1012CR-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 630mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 630mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012CR-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012CR-T1-GE3 - 028321-SI1012CR-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012CR-T1-GE3
028321-SI1012CR-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012CR-T1-GE3 028321-SI1012CR-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028321-SI1012CR-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 240mW (Ta) Family Name: Si1012CR Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-75A Dimension: SC-75, SOT-416 Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 2nC @ 8V Max Input Capacitance: 43pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 396 mOhm @ 600mA, 4.5V Alternative Parts (Cross-Reference): DMG1012T-7; DMG1012T; DMG1012TQ-7; PMR290UNE; Introduction Date: March 20, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028321-SI1012CR-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 240mW (Ta)
Family Name: Si1012CR
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-75A
Dimension: SC-75, SOT-416
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2nC @ 8V
Max Input Capacitance: 43pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 396 mOhm @ 600mA, 4.5V
Alternative Parts (Cross-Reference): DMG1012T-7; DMG1012T; DMG1012TQ-7; PMR290UNE;
Introduction Date: March 20, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI1012CR-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI1012CR-T1-GE3
Single FETs, MOSFETs SI1012CR-T1-GE3
MOSFET N-CH 20V SC75A

MOSFET N-CH 20V SC75A

Supplier's Site Datasheet
Single FETs, MOSFETs - SI1012CR-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012CR-T1-GE3TR-ND
Single FETs, MOSFETs SI1012CR-T1-GE3TR-ND
N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A

N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A

Buy Now Datasheet
Single FETs, MOSFETs - SI1012CR-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012CR-T1-GE3CT-ND
Single FETs, MOSFETs SI1012CR-T1-GE3CT-ND
N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A

N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A

Buy Now Datasheet
Single FETs, MOSFETs - SI1012CR-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012CR-T1-GE3DKR-ND
Single FETs, MOSFETs SI1012CR-T1-GE3DKR-ND
N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A

N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A

Buy Now Datasheet
Mosfet, N Channel, 20V, 0.63A, Sc-75A; Channel Type Vishay - 64T4048 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 20V, 0.63A, Sc-75A; Channel Type Vishay
64T4048
Mosfet, N Channel, 20V, 0.63A, Sc-75A; Channel Type Vishay 64T4048
MOSFET, N CHANNEL, 20V, 0.63A, SC-75A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

MOSFET, N CHANNEL, 20V, 0.63A, SC-75A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

Supplier's Site
N-Channel 20-V (D-S) Mosfet Vishay - 26AK9913 - Newark, An Avnet Company
Chicago, IL, United States
N-Channel 20-V (D-S) Mosfet Vishay
26AK9913
N-Channel 20-V (D-S) Mosfet Vishay 26AK9913
N-CHANNEL 20-V (D-S) MOSFET

N-CHANNEL 20-V (D-S) MOSFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V Vds 8V Vgs SC75A

MOSFET 20V Vds 8V Vgs SC75A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1012CR-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1012CR-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1012CR-T1-GE3
MOSFET N-CH 20V SC75A

MOSFET N-CH 20V SC75A

Supplier's Site
VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount - 880-SI1012CR-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount
880-SI1012CR-T1-GE3
VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount 880-SI1012CR-T1-GE3
VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount

VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET
Product Number 278-SI1012CR-T1-GE3 028321-SI1012CR-T1-GE3 SI1012CR-T1-GE3 SI1012CR-T1-GE3TR-ND 64T4048 26AK9913 SI1012CR-T1-GE3 SI1012CR-T1-GE3 880-SI1012CR-T1-GE3
Product Name N-Channel SMD 20V 630mA MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012CR-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N Channel, 20V, 0.63A, Sc-75A; Channel Type Vishay N-Channel 20-V (D-S) Mosfet Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
PD 240 milliwatts 240 milliwatts 240 milliwatts 240 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
V(BR)DSS 20 volts 20 volts 20 volts
Package Type SOT3; SC-75A SC-75, SOT-416 SC-75, SOT-416 TO-3 TO-3 SC-75, SOT-416
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