Vishay Precision Group N Channel Mosfet; Channel Type Vishay SD211DE-2

Description
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:500mV; Power Dissipation:300mW RoHS Compliant: No
  • N Channel Mosfet; Channel Type Vishay - 46C1923 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:500mV; Power Dissipation:300mW RoHS Compliant: No

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N Channel Mosfet; Channel Type Vishay - 46C1923 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet; Channel Type Vishay
46C1923
N Channel Mosfet; Channel Type Vishay 46C1923
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:500mV; Power Dissipation:300mW RoHS Compliant: No

N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:500mV; Power Dissipation:300mW RoHS Compliant: No

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Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 46C1923
Product Name N Channel Mosfet; Channel Type Vishay
Polarity N-Channel
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