Vishay Intertechnology, Inc. Single FETs, MOSFETs MXPQ120C040W-GE3

The MXPQ120C040W-GE3 is a 1200 V N-channel SiC MOSFET in a TO-247AD 3L package, designed for automotive on-board chargers, DC/DC converters, and electric traction inverters. It has a typical on-state resistance of 40 mΩ at 25 °C and a continuous drain current of 53 A. The device features a short-circuit withstand time of 2 μs, a maximum junction temperature of 175 °C, and is AEC-Q101 qualified. Its drain-source breakdown voltage is 1200 V, with a gate-source voltage rating of -10 V to +22 V. The package measures 20.80 to 21.10 mm in length, 15.75 to 16.13 mm in width, and 4.83 to 5.21 mm in height. The component is lead-free and halogen-free.