Vishay Intertechnology, Inc. Single FETs, MOSFETs MXP120C040W-GE3

The MXP120C040W-GE3 is a 1200 V N-channel SiC MOSFET in a TO-247AD 3L package, designed for high-efficiency switching in solar inverters, energy storage systems, and UPS applications. It has a typical drain-source on-state resistance of 40 mΩ at 25 °C and a continuous drain current of 53 A. The device supports a short-circuit withstand time of 2 μs and operates with a junction temperature range from -55 °C to +175 °C. Thermal resistance from junction to case is 0.52 °C/W. The part is lead-free and halogen-free, and meets RoHS compliance.