Vishay Intertechnology, Inc. Single FETs, MOSFETs MXP120A080FL-GE3

The MXP120A080FL-GE3 is a 1200 V N-channel SiC MOSFET in a TO-247AD 4L package, designed for high-efficiency switching applications such as EV chargers, auxiliary motor drives, and DC/DC converters. It features a typical on-state resistance of 80 mΩ at 25 °C and 20 V gate-source voltage, a continuous drain current of 29 A at 25 °C, and a short-circuit withstand time of 3 μs. The device has a maximum junction-to-case thermal resistance of 0.9 °C/W and operates from -55 °C to +150 °C. It is lead-free, halogen-free, and meets RoHS compliance standards.