Vishay Intertechnology, Inc. Single FETs, MOSFETs MXP120A063SL-GE3

MXP120A063SL-GE3 is a 1200 V N-channel SiC MOSFET in a TO-247AD 4L package, designed for high-efficiency switching in solar inverters, energy storage systems, and UPS applications. The device has a typcial on-resistance of 63 mΩ at 25 °C and 18 V gate-source voltage, with a continuous drain current rating of 39 A and maximum power dissipation of 205 W. It features a short-circuit withstand time of 3 μs, an operating junction and storage temperature range of -55 °C to +175 °C, and a drain-source breakdown voltage of 1200 V. The package has a typical junction-to-case thermal resistance of 0.73 °C/W and a junction-to-ambient thermal resistance of up to 40 °C/W. It complies with RoHS standards and is lead-free and halogen-free.