Vishay Intertechnology, Inc. Single FETs, MOSFETs MXP120A045SW-GE3

The MXP120A045SW-GE3 is a 1200 V N-channel silicon carbide MOSFET in a TO-247AD 3L package, designed for high-efficiency switching in solar inverters, motor drives, and DC/DC converters. It features a typ. drain-source on-state resistance of 45 mΩ at 25 °C and a continuous drain current of 51 A. The device has a short-circuit withstand time of 3 µs and a maximum power dissipation of 254 W. Junction and storage temperatures range from -55 °C to +175 °C. The package is lead-free and halogen-free.