Vishay Intertechnology, Inc. Single FETs, MOSFETs MXP120A045FW-GE3

The MXP120A045FW-GE3 is a 1200 V N-channel SiC MOSFET in a TO-247AD 3L package, designed for high-efficiency switching applications such as chargers, boost inverters, and DC/DC converters. It has a typical on-resistance of 45 mΩ at 25 °C and 20 V gate-source voltage, a continuous drain current of 49 A at 25 °C, and a maximum junction temperature of 150 °C. The device features a short-circuit withstand time of 3 μs, total gate charge of 75.6 nC, and output capacitance of 90 pF. It is halogen-free and lead-free, meeting RoHS standards, with a maximum junction-to-case thermal resistance of 0.55 °C/W and a maximum junction-to-ambient thermal resistance of 40 °C/W.