Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF IRLZ34PBF

Description
Manufacturer: Vishay Win Source Part Number: 133979-IRLZ34PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 50 mOhm @ 18A, 5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 50
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF - 133979-IRLZ34PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRLZ34PBF-ND - DigiKey
    DigiKey
  • MOSFETs - 1808733 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1808365 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ34PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay - 63J7707 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 133979-IRLZ34PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 50 mOhm @ 18A, 5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF - 133979-IRLZ34PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF
133979-IRLZ34PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF 133979-IRLZ34PBF
Manufacturer: Vishay Win Source Part Number: 133979-IRLZ34PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 50 mOhm @ 18A, 5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: Vishay
Win Source Part Number: 133979-IRLZ34PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 35nC @ 5V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 50 mOhm @ 18A, 5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IRLZ34PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLZ34PBF-ND
Single FETs, MOSFETs IRLZ34PBF-ND
N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB

N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFETs - 1808733 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808733
MOSFETs 1808733
N channel ;VBRDSS 60 V; RDSon 50 mOhm

N channel ;VBRDSS 60 V; RDSon 50 mOhm

Supplier's Site
MOSFETs - 1808365 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808365
MOSFETs 1808365
N channel ;VBRDSS 60 V; RDSon 50 mOhm

N channel ;VBRDSS 60 V; RDSon 50 mOhm

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ34PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLZ34PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLZ34PBF
MOSFET N-CH 60V 30A TO220AB

MOSFET N-CH 60V 30A TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRLZ34PBF
MOSFET IRLZ34PBF
MOSFET N-CH 60V HEXFET MOSFET

MOSFET N-CH 60V HEXFET MOSFET

Buy Now Datasheet
N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay - 63J7707 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay
63J7707
N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay 63J7707
N CHANNEL MOSFET, 60V, 30A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 30A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 133979-IRLZ34PBF IRLZ34PBF-ND 1808733 IRLZ34PBF IRLZ34PBF 63J7707
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 88000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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