Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF IRLZ34PBF

Description
Manufacturer: Vishay Win Source Part Number: 133979-IRLZ34PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 50 mOhm @ 18A, 5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 50
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Description
Manufacturer: Vishay Win Source Part Number: 133979-IRLZ34PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 50 mOhm @ 18A, 5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF - 133979-IRLZ34PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF
133979-IRLZ34PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF 133979-IRLZ34PBF
Manufacturer: Vishay Win Source Part Number: 133979-IRLZ34PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 50 mOhm @ 18A, 5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: Vishay
Win Source Part Number: 133979-IRLZ34PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 35nC @ 5V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 50 mOhm @ 18A, 5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IRLZ34PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLZ34PBF-ND
Single FETs, MOSFETs IRLZ34PBF-ND
N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB

N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFETs - 1808733 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808733
MOSFETs 1808733
N channel ;VBRDSS 60 V; RDSon 50 mOhm

N channel ;VBRDSS 60 V; RDSon 50 mOhm

Supplier's Site
MOSFETs - 1808365 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808365
MOSFETs 1808365
N channel ;VBRDSS 60 V; RDSon 50 mOhm

N channel ;VBRDSS 60 V; RDSon 50 mOhm

Supplier's Site
Singapore
N-Channel 60V 30A MOSFET Transistor
278-IRLZ34PBF
N-Channel 60V 30A MOSFET Transistor 278-IRLZ34PBF
N-Channel MOSFET, 60V, 30A, 50mR Rds On, TO-220AB Product overview: IRLZ34PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLZ34PBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 60V, 30A, 50mR Rds On, TO-220AB Product overview: IRLZ34PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLZ34PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ34PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLZ34PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLZ34PBF
MOSFET N-CH 60V 30A TO220AB

MOSFET N-CH 60V 30A TO220AB

Supplier's Site
N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay - 63J7707 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay
63J7707
N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay 63J7707
N CHANNEL MOSFET, 60V, 30A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 30A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 60V HEXFET MOSFET

MOSFET N-CH 60V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 133979-IRLZ34PBF IRLZ34PBF-ND 1808733 278-IRLZ34PBF IRLZ34PBF 63J7707 IRLZ34PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ34PBF Single FETs, MOSFETs MOSFETs N-Channel 60V 30A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 88000 milliwatts 88000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F)
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